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        <title>Electric Field Effect in Atomically Thin Carbon Films</title>
        <author>K. S. Novoselov</author>
        <author>A. K. Geim</author>
        <author>et al.</author>
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          <title>Electric Field Effect in Atomically Thin Carbon Films</title>
          <date>2004</date>
          <publisher>Science / arXiv</publisher>
          <idno type="DOI">10.1126/science.1102896</idno>
          <idno type="arXiv">cond-mat/0410550</idno>
          <idno type="record">novoselov2004-graphene</idno>
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          <note type="rights">arxiv-open</note>
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        <label>existence</label>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t1" type="phenomenon" ana="#phenomenon" resp="#paper">
        <label>ambipolar electric field effect in few-layer graphene</label>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t2" type="method" ana="#method" resp="#paper">
        <label>experiment</label>
        <term>experiment</term>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t3" type="mechanisms" ana="#mechanisms[0]" resp="#tagger">
        <label>mechanisms</label>
        <term>atomically-thin (few-layer) graphene is stable and metallic under ambient conditions, and its carrier density is tunable by an electric field (ambipolar field effect), enabling ballistic transport</term>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t4" type="limitations" ana="#limitations[0]" resp="#tagger">
        <label>an observed shift could be due to unintentional doping by absorbed gas molecules</label>
        <note>what this limits: the observed gate-voltage shift: Quotation withheld</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t5" type="limitations" ana="#limitations[1]" resp="#tagger">
        <label>The zero-gate-voltage hole doping may be an artefact of adsorbed gas molecules rather than intrinsic.</label>
        <note>what this limits: the same scope as limitations[0] - the zero-gate-voltage hole doping may be adsorbate, not intrinsic</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t6" type="limitations" ana="#limitations[2]" resp="#tagger">
        <label>The authors cannot explain why the measured behaviour fits a simple free-electron model when graphene is expected to have linear dispersion and massless carriers.</label>
        <note>what this limits: the free-electron description of the transport data: GRAPHENE IS EXPECTED TO HAVE THE LINEAR ENERGY DISPERSION AND CARRIERS WITH ZERO MASS, AND THE REASON WHY THE OBSERVED BEHAVIOR IS SO WELL DESCRIBED BY THE SIMPLEST FREE-ELE[ctron model is unclear] - the fit is unexplained, not the failure</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
      </span>
      <span xml:id="t7" type="limitations" ana="#limitations[3]" resp="#tagger">
        <label>The transistor&#x27;s on-off resistance ratio is modest and this is a fundamental limit for a gapless material.</label>
        <note>what this limits: the device application claim: GRAPHENE TRANSISTORS SHOW A RATHER MODEST ON-OFF RESISTANCE RATIO ... BUT THIS IS A FUNDAMENTAL LIMITATION FOR ANY MAT[erial without a gap]</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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        <label>The devices differ in the one variable that defines the material - the number of layers - and that number is inferred from the measurement rather than known.</label>
        <note>what this limits: the band overlap reported here as a property of the material: it varied from 4 to 20 meV across samples, which the authors attribute to a different number of graphene layers involved, inferred rather than independently established</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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        <label>The headline mobility is the top of a sample-to-sample range, and mobility is stated to be limited by defect scattering rather than intrinsic.</label>
        <note>what this limits: the mobility figure quoted from this paper: measured values varied from sample to sample between 3,000 and 10,000, and were practically independent of temperature, which the authors read as still being limited by scattering on defects</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t10" type="limitations" ana="#limitations[6]" resp="#tagger" cert="1.0">
        <label>What is measured is few-layer graphene of one, two or three atomic layers reported together, not single-layer graphene.</label>
        <note>what this limits: these results as measurements of single-layer graphene: the reported devices contained just 1, 2 or 3 atomic layers and all of them are reported as exhibiting essentially identical electronic properties</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t11" type="controls" ana="#controls[0]" resp="#tagger" cert="0.85">
        <label>the observed reduction in the energy gap checked against the theoretical expectation that single-layer graphene is a zero-gap semiconductor</label>
        <note>eliminates: the measured gap being an artefact of the film thickness or the substrate rather than the band structure the paper is claiming · outcome (stated by the tagger, no quotation): held</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t12" type="concepts" ana="#concepts[0]" resp="#paper">
        <label>graphene</label>
        <term>graphene</term>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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        <label>field effect</label>
        <term>field effect</term>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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        <label>few-layer graphene</label>
        <term>few-layer graphene</term>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t15" type="concepts" ana="#concepts[5]" resp="#paper">
        <label>2D semimetal</label>
        <term>2D semimetal</term>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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        <label>band overlap</label>
        <term>band overlap</term>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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        <label>carrier mobilities</label>
        <term>carrier mobilities</term>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t18" type="concepts" ana="#concepts[8]" resp="#paper">
        <label>field effect</label>
        <term>field effect</term>
        <note>duplicate of: concepts[2]</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t19" type="senses" ana="#senses[0]" resp="#tagger" cert="1.0">
        <label>graphene - A NAME IN USE BEFORE ITS REFERENT EXISTED: a hypothetical single layer, employed to describe the properties of graphite, fullerenes and nanotubes, while planar graphene itself was presumed not to exist in the free state</label>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t20" type="senses" ana="#senses[1]" resp="#tagger" cert="1.0">
        <label>graphene - AS MEASURED IN THIS PAPER: few-layer graphene, devices of one, two or three atomic layers pooled together, which is not the sense the word now carries</label>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t21" type="senses" ana="#senses[2]" resp="#tagger" cert="1.0">
        <label>carrier mobility - MEASURED TWO INDEPENDENT WAYS AND AGREEING: from the field effect and from magnetoresistance, which is the rarer and stronger case of two operationalisations converging</label>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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        <label>contradicts → the prior consensus (refs 5-14) that planar graphene cannot exist in the free state</label>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t23" type="concept_edges" ana="#concept_edges[0]" resp="#tagger">
        <label>few-layer graphene —is-a→ 2D semimetal</label>
        <term>few-layer graphene</term>
        <term>2D semimetal</term>
        <note>strength of the relation: 1
Audit 2026-09-28: DOUBTFUL - read against its full span and kept, but the span writes &#x27;FLG&#x27;; endpoint abbreviated.</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t24" type="concept_edges" ana="#concept_edges[1]" resp="#tagger">
        <label>carrier mobilities —operationalised-as→ field effect</label>
        <term>carrier mobilities</term>
        <term>field effect</term>
        <note>strength of the relation: 1</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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        <label>≈10,000 — room-temperature charge-carrier mobility in graphene films</label>
        <note>about this quote: QUOTE REPAIRED: the extractor split a hyphen-space and the quote was recorded faithfully with the damage in it, which made it unanchorable. The repaired string is an EXACT SUBSTRING of the staged text - that is why it was accepted, not because a rule produced it. The text as originally recorded is kept in evidence as extracted.</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t26" type="content_tags" ana="#content_tags.quantities[1]" resp="#tagger">
        <label>up to 10^13 — electron/hole concentrations inducible by gate voltage</label>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t27" type="content_tags" ana="#content_tags.findings[0]" resp="#tagger">
        <label>The films are a two-dimensional semimetal with a tiny band overlap and a strong ambipolar electric-field effect: electrons and holes can be induced by applying gate voltage.</label>
        <note>about this quote: QUOTE REPAIRED: the extractor split a hyphen-space and the quote was recorded faithfully with the damage in it, which made it unanchorable. The repaired string is an EXACT SUBSTRING of the staged text - that is why it was accepted, not because a rule produced it. The text as originally recorded is kept in evidence as extracted.</note>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <span xml:id="t28" type="content_tags" ana="#content_tags.findings[1]" resp="#tagger">
        <label>Graphene forms an all-metallic field-effect transistor exhibiting ballistic transport at submicron distances even at room temperature.</label>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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        <label>gate voltage</label>
        <term>gate voltage</term>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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        <label>graphene</label>
        <term>graphene</term>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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        <label>few-layer graphene (FLG)</label>
        <term>few-layer graphene (FLG)</term>
        <note type="quotation-withheld">Quotation withheld because this record is not cleared for redistribution.</note>
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      <p><note type="rights">The full text of this article is not redistributable, so it is
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      grounding status remain. The article itself is at https://doi.org/10.1126/science.1102896.</note></p>
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