standOff, and the article is at its publisher via the link below. When we have changed our mind. Some entries in the table begin with a word in capitals and the reason for it. EVIDENCE CORRECTED — the finding still stands, but we had quoted the wrong sentence from the paper, and the quotation has been replaced with the right one. RETRACTED — the entry itself was wrong; it stays on the page, marked, with the reason, rather than being deleted. WITHDRAWN AND REPLACED — the entry was wrong, and a corrected version of it appears in the entries below. Each mark carries its own reason, in brackets, because the reasons differ from one entry to the next. An entry we have WITHDRAWN is removed from this page and kept in the record, with its reason. A line reading Audit and a date is a later re-reading of the entry against its whole sentence: DOUBTFUL means it was kept, and the reason says what is loose about it. Quotation marks inside the tagger's sentence. Where a tag is the tagger's own sentence, a phrase in quotation marks inside it is borrowed from the paper — the tagger's wording around it is not. The paper's own sentence is the evidence quote for that row; on this page it is withheld with the article, and the article is at its publisher. Nothing inside quotation marks anywhere on this page is ours: if it is quoted, it is the paper's. Whose words a concept carries. A concept entry records a term the paper itself uses, so the term, the sense given for it, and its evidence are the paper's own words, quoted where the paper fixes them. This is the opposite of a sense entry in the tag table, which is the tagger's sentence about how the paper uses a term. Where a concept entry could not be grounded in the paper's words, the entry says so on its own row.| relation to other work | claim_relations | how this paper stands to another: agrees, contradicts, extends, qualifies |
| claim type | claim_type | the shape of the claim: existence, mechanism, method, critique, prediction, null |
| concept edge | concept_edges | an asserted relation between two concepts, with the sentence asserting it |
| concept | concepts | an idea the paper works with, quoted where the paper uses it |
| content tag | content_tags | a finding, definition, quantity, statistic or variable named in the paper |
| contribution | contribution | what the paper claims to add |
| control | controls | an experiment run to eliminate a rival explanation |
| limitation | limitations | what the paper says its evidence cannot support |
| mechanism | mechanisms | how the reported effect is said to come about |
| method | method | how the paper produced its evidence |
| object of study | object_of_study | what the paper is about — the thing it investigates |
| phenomenon | phenomenon | the effect or regularity under study |
| research question | research_question | the question the paper sets itself |
| sense | senses | a distinct use of a term, quoted where the paper fixes it |
| transfer | transfers | a method or concept carried in from another field |
| unrecordable relation | unhoused_relations | a relation the paper asserts that this vocabulary cannot express, with the reason |
Relations on this page carry a quotation for the claim. Where a relation was separately evidenced — and so tested against the vocabulary for its type — the row says so; none of 5 relations here carry that mark. The rest are the tagger’s reading of the sentence quoted beside them.
| facet | tag | field | conf. | whose words |
|---|---|---|---|---|
| object_of_study | the ultrawide-bandgap semiconductors - AlGaN/AlN, diamond, Ga2O3 and cubic BN - and what stands between their theoretical advantage and a working device Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | object_of_study | the paper's words | |
| research_question | which materials, physics and device problems must be solved before ultrawide-bandgap semiconductors can deliver the performance their bandgaps imply Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | research_question | the paper's words | |
| contribution | 26 numbered research opportunities and challenges, a re-derived table of reference material properties, and an explicit maturity assessment of each material system Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | contribution | the paper's words | |
| claim_type | critique Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | claim_type | the paper's words | |
| phenomenon | a nonlinear payoff: because the critical field scales as the square of the bandgap and the Baliga figure of merit as its cube, device performance scales as roughly the sixth power of bandgap Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | phenomenon | the paper's words | |
| method | review Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: review | method | the paper's words | |
| mechanisms | why a modest bandgap increase is worth a hard materials problem: the critical field goes as the square of the bandgap and the Baliga FOM as its cube, so GaN to AlN is 1.8x in bandgap and about 34x in figure of merit Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: sixth-power scaling | mechanisms[0] | 0.95 | the tagger's words |
| mechanisms | why doping gets harder as the gap widens - Quotation withheld, so free carriers first rise with dopant concentration and then fall Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: compensation rising with bandgap | mechanisms[1] | 0.95 | the tagger's words |
| mechanisms | a second doping obstacle: localized valence-band states, notably from first-row elements such as oxygen, let a hole trap itself in its own lattice distortion as a small polaron, suppressing mobility even where a shallow acceptor exists Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: self-trapping | mechanisms[2] | 0.95 | the tagger's words |
| mechanisms | the fundamental obstacle to gate insulators: a dielectric with a large bandgap tends to have a low dielectric constant and vice versa, so the high-k insulator a UWBG MOSFET wants may not exist Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: the bandgap-permittivity trade-off | mechanisms[3] | 0.95 | the tagger's words |
| mechanisms | new physics that only appears here - when the bandgap exceeds the electron affinity, a carrier must have kinetic energy above the affinity to impact-ionise, so it momentarily occupies vacuum states before doing so Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: breakdown through vacuum states | mechanisms[4] | 0.95 | the tagger's words |
| mechanisms | why carrier confinement gets harder with a wider gap: the number of semiconductors and insulators with large enough band offsets DECREASES, and for AlN, BN and diamond few dielectrics are predicted to confine electrons at all Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: confiners run out | mechanisms[5] | 0.95 | the tagger's words |
| limitations | every one of the three leading UWBG materials is poor on at least one of the three metrics that matter: AlN and Ga2O3 cannot be usefully p-doped, and diamond substrates are small or defective Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | limitations[0] | 0.95 | the tagger's words |
| limitations | the critical breakdown fields of AlN, BN, Ga2O3 and diamond - the property the whole case rests on - are yet to be accurately determined Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | limitations[1] | 0.95 | the tagger's words |
| limitations | Ga2O3's thermal conductivity is one to two orders of magnitude below the other UWBG semiconductors, which the paper calls perhaps its single most serious weakness Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | limitations[2] | 0.95 | the tagger's words |
| limitations | and p-type doping of Ga2O3 has never been reported, with hole self-trapping predicted from first principles Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | limitations[3] | 0.95 | the tagger's words |
| limitations | AlN has no known acceptors at all, and only one postulated shallow donor Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | limitations[4] | 0.95 | the tagger's words |
| limitations | c-BN is the least mature of them, with substrates available only by the high-pressure high-temperature route Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | limitations[5] | 0.95 | the tagger's words |
| limitations | the survey covers only the KNOWN applications, and the authors say plainly that the technology will create applications that do not yet exist Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | limitations[6] | 0.95 | the tagger's words |
| limitations | extracting a critical field from a working device is unreliable because edge terminations cause premature breakdown - and the higher the voltage the more likely that is, so the measurement gets harder exactly where it matters most Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | limitations[7] | 0.95 | the tagger's words |
| limitations | deep-level transient spectroscopy stops working on these materials because the traps are too deep and emission times too long - a standard characterisation technique defeated by the property under study Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | limitations[8] | 0.95 | the tagger's words |
| limitations | and as devices shrink, optical thermometry becomes diffraction-limited, so a point-temperature measurement silently becomes a weighted average over a volume Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | limitations[9] | 0.95 | the tagger's words |
| transfers | TCAD device-modelling tools and physical models developed for silicon, applied to ultrawide-bandgap semiconductors Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | transfers[0] | 0.85 | the tagger's words |
| controls | re-surveying the room-temperature material properties from the primary literature rather than reproducing the values in common use Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. eliminates: a comparison table built on numbers measured decades ago on material that would now be called highly defective - which is the stated reason the re-survey was necessary · outcome: held | controls[0] | 0.95 | the tagger's words |
| controls | projecting every material's critical field from GaN's measured value THROUGH THE SAME assumed device - a non-punched-through p+/n diode at a stated donor concentration Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. eliminates: materials being ranked on critical fields measured in different device geometries at different dopings, which the authors call ensuring a level playing field · outcome: held | controls[1] | 0.95 | the tagger's words |
| controls | choosing the Hall-derived bulk drift mobility over values fitted to current-voltage characteristics, on the stated ground that the fits carry more assumptions Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. eliminates: a mobility chosen for convenience - AND THE AUTHORS BOUND THE STAKES rather than just declaring the choice: the critical field varies as the cube root of mobility, so the difference is small · outcome: held | controls[2] | 0.95 | the tagger's words |
| controls | flagging every table entry where the reported figure is a Hall mobility because the conversion factor to drift mobility is unknown for that material Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. eliminates: two different quantities being read down one column as if they were the same measurement · outcome: held | controls[3] | 0.95 | the tagger's words |
| controls | labelling the maturity verdict INFORMAL and printing its three sub-criteria as separate table rows Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. eliminates: a Mature/Immature label being read as a measurement - the inputs are beside it and a reader can disagree with the aggregation · outcome: held | controls[4] | 0.95 | the tagger's words |
| controls | compiling all 26 research opportunities/challenges into a single numbered list in Section 5, having stated each where it arose Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. eliminates: an agenda that exists only as prose scattered through 42,000 words - the list is what makes the paper's claims about the field's gaps countable · outcome: held | controls[5] | 0.95 | the tagger's words |
| controls | warning against importing default physical mechanisms from silicon TCAD, or extrapolating them past the range the legacy materials support Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. eliminates: a model that runs and converges on UWBG devices while computing silicon's physics - the paper then gives four specific ways it goes wrong · outcome: held | controls[6] | 0.95 | the tagger's words |
| controls | stating that standard characterisation assumptions, such as complete ionisation of dopants, may simply be untrue in these materials Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. eliminates: experimental results being interpreted through assumptions that hold for narrower-gap semiconductors and not here · outcome: held | controls[7] | 0.95 | the tagger's words |
| concepts | bandgap Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: bandgap | concepts[0] | 0.95 | the paper's words |
| concepts | critical electric field Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: critical electric field | concepts[1] | 0.95 | the paper's words |
| concepts | figures-of-merit Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: figures-of-merit | concepts[2] | 0.95 | the paper's words |
| concepts | Johnson figure of merit Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: Johnson figure of merit | concepts[3] | 0.95 | the paper's words |
| concepts | Baliga figure of merit Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: Baliga figure of merit | concepts[4] | 0.95 | the paper's words |
| concepts | maturity Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: maturity | concepts[5] | 0.95 | the paper's words |
| concepts | permittivity Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: permittivity | concepts[6] | 0.95 | the paper's words |
| concepts | compensation Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: compensation | concepts[7] | 0.95 | the paper's words |
| concepts | self-trapping Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: self-trapping | concepts[8] | 0.95 | the paper's words |
| concepts | dielectric constant Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: dielectric constant | concepts[9] | 0.95 | the paper's words |
| concepts | AlN Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: AlN | concepts[10] | 0.95 | the paper's words |
| concepts | diamond Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: diamond | concepts[11] | 0.95 | the paper's words |
| concepts | Ga2O3 Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: Ga2O3 | concepts[12] | 0.95 | the paper's words |
| concepts | GaN Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: GaN | concepts[13] | 0.95 | the paper's words |
| concepts | thermal conductivity Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: thermal conductivity | concepts[14] | 0.95 | the paper's words |
| concepts | acceptors Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: acceptors | concepts[15] | 0.95 | the paper's words |
| concepts | Hall mobilities Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: Hall mobilities | concepts[16] | 0.95 | the paper's words |
| unhoused_relations | bandgap → dielectric constant Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. AN INVERSE TRADE-OFF ACROSS MATERIALS, NOT A CAUSAL EFFECT WITHIN ONE. 'any dielectric…'. Nothing is being done to a bandgap to lower a permittivity; it is a regularity over the space of available materials, and it is the reason a high-k ultrawide-bandgap gate insulator may not exist. 'causes ... reduces' would assert a mechanism the paper does not claim, and there is no 'trades-off-against' or 'correlates-with' type | unhoused_relations[0] | the tagger's words | |
| unhoused_relations | AlN → acceptors Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. A MATERIAL DEFINED HERE BY WHAT IT LACKS. 'no known acceptors…' - this is the single fact that keeps AlN out of bipolar devices, and every one of the eight relation types asserts that something HOLDS. The nearest available edge, 'causes ... eliminates', says AlN does something to acceptors; what is true is that none has been found | unhoused_relations[1] | the tagger's words | |
| unhoused_relations | maturity → Ga2O3 Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. A JUDGEMENT ABOUT A THING, MADE BY THE PAPER, AND LABELLED AS ONE. 'an informal assessment of the maturity level', resolving to Mature or Immature over three named sub-criteria. This is the relation type this corpus most needs and does not have - an ASSESSMENT edge, carrying who judged, on what criteria, and how firmly. Every one of our eight types says something about the world; none says something about an appraisal of the world | unhoused_relations[2] | the tagger's words | |
| senses | maturity assessment - THE PAPER CALLS ITS OWN JUDGEMENT LAYER INFORMAL, IN THE SENTENCE THAT INTRODUCES IT. It is a Mature/Immature verdict resting on three named sub-criteria - doping, volume/cost, substrate size and availability - each reported separately in its own table row. A score whose inputs are printed beside it is a score a reader can disagree with Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | senses[0] | 0.95 | the tagger's words |
| senses | figure of merit - THERE IS NO SINGLE ONE, AND WHICH APPLIES DEPENDS ON THE APPLICATION. The Baliga FOM is for low-frequency unipolar vertical power switches; for high-frequency high-power work the Johnson FOM is `more appropriate`. A material's rank changes with the question, so a table of FOMs is a table of conditional rankings Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | senses[1] | 0.95 | the tagger's words |
| senses | critical electric field, in the properties table - PROJECTED, NOT MEASURED. The values for AlN, Ga2O3, c-BN and diamond are calculated from GaN's experimentally derived field, and to compare them fairly the authors assume the SAME hypothetical device for all: a non-punched-through p+/n diode at a stated donor concentration. A number in a properties column that is a model output with a device baked into it Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | senses[2] | 0.95 | the tagger's words |
| senses | intrinsic carrier concentration, for an ultrawide-bandgap material - A NUMBER FERMI-DIRAC STATISTICS PRODUCE THAT IS NOT A QUANTITY. Around 10^-10 cm^-3, which the authors say `has no direct physical meaning`, because the statistics assume carriers come from the high-energy tail of a thermal distribution and that assumption fails several electron-volts from a band edge. It still enters TCAD models and destabilises them Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | senses[3] | 0.95 | the tagger's words |
| senses | immature - THE PAPER'S VERDICT ON EVERY UWBG MATERIAL INCLUDING THE ONES IT CHAMPIONS, and it is a comparative claim rather than a criticism: the field is placed where GaN and SiC were in the 1980s. Each of the three leading materials is poor on at least one of the three metrics, and the paper says which Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | senses[4] | 0.95 | the tagger's words |
| senses | material property, of the kind tabulated in reviews - NOT NECESSARILY STABLE. This paper re-derived them because values in common use were measured decades ago on material that would now be called highly defective. GaN turned out to have at least FIVE different permittivity sets in circulation, and AlN's bandgap was moved from 6.2 to 6.0 eV in 2010 by a better measurement. A constant in a table has a date and a method behind it Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | senses[5] | 0.95 | the tagger's words |
| claim_relations | critiques → the material property values in common use across the semiconductor literature, including for GaN, many measured decades ago on highly defective material Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | claim_relations[0] | 0.95 | the tagger's words |
| claim_relations | distinguishes-from → the five different sets of GaN permittivity values circulating in the field Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. note: the paper does not adjudicate between the five on theoretical grounds - it re-searches the literature and takes new AlN measurements, and calls establishing the best values an important outcome OF THIS STUDY rather than a side note | claim_relations[1] | 0.95 | the tagger's words |
| claim_relations | contradicts → the historical 6.2 eV bandgap of AlN, based on older absorption measurements Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. note: not this paper's own finding - it reports the 2010 redefinition by high-resolution photoluminescence and adopts it. The relation is to the superseded value | claim_relations[2] | 0.9 | the tagger's words |
| claim_relations | qualifies → the Baliga figure of merit as the general measure of a power semiconductor's promise Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | claim_relations[3] | 0.95 | the tagger's words |
| claim_relations | builds-on → the community of UWBG researchers who met at the second Technical Exchange in April 2016, whose identified challenges this article articulates Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | claim_relations[4] | 0.95 | the tagger's words |
| concept_edges | bandgap —causes→ critical electric field Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. direction on the measure: increases · strength of the relation: 0.95 · note: and the exponent is what makes the whole field worth the trouble - squared here, cubed again into the Baliga FOM, sixth power overall also in: bandgap · critical electric field | concept_edges[0] | the tagger's words | |
| concept_edges | critical electric field —causes→ Baliga figure of merit Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. direction on the measure: increases · strength of the relation: 0.95 also in: critical electric field · Baliga figure of merit | concept_edges[1] | the tagger's words | |
| concept_edges | bandgap —causes→ compensation Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. direction on the measure: increases · strength of the relation: 0.9 · note: THE SAME VARIABLE THAT PAYS AT THE SIXTH POWER ALSO CAUSES THE PROBLEM. Two signed edges out of 'bandgap' in opposite directions of usefulness, from two sentences in the same paper
Audit 2026-09-28: DOUBTFUL - read against its span and kept, but the span describes a tendency to compensation in UWBG semiconductors; 'bandgap increases' is loose. also in: bandgap · compensation | concept_edges[2] | the tagger's words | |
| concept_edges | Baliga figure of merit —contrasted-with→ Johnson figure of merit Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. strength of the relation: 1 · note: and the contrast is conditional on the application, not on the material - which is why a single ranking of these semiconductors cannot be right also in: Baliga figure of merit · Johnson figure of merit | concept_edges[3] | the tagger's words | |
| concept_edges | Ga2O3 —distinct-from→ diamond Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. strength of the relation: 0.9 · note: distinguished here by WHICH metric each fails - Ga2O3 cannot be p-doped, diamond's substrates are small or defective
Audit 2026-09-28: DOUBTFUL - read against its full span and kept, but the span lists different weaknesses of the UWBG materials; distinct-from is loose. | concept_edges[4] | the tagger's words | |
| content_tags | Especially important research opportunities and challenges are called out throughout the paper and compiled in Section 5. Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | content_tags.findings[0] | 0.95 | the tagger's words |
| content_tags | UWBG semiconductors are at a development stage similar to GaN and SiC in the 1980s. Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | content_tags.findings[1] | 0.95 | the tagger's words |
| content_tags | Each of the three UWBG materials is poor on at least one of three metrics: AlN and Ga2O3 cannot or can only poorly be p-doped, and diamond substrates are small or of poor quality. Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | content_tags.findings[2] | 0.95 | the tagger's words |
| content_tags | GaN has at least FIVE different sets of permittivity values in common use, and establishing the best ones is claimed as an outcome of this study Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | content_tags.findings[3] | 0.95 | the tagger's words |
| content_tags | AlN's bandgap was redefined from a historical 6.2 eV to about 6.0 eV in 2010 by high-resolution photoluminescence Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | content_tags.findings[4] | 0.95 | the tagger's words |
| content_tags | The critical breakdown fields of AlN, BN, Ga2O3 and diamond are yet to be accurately determined. Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | content_tags.findings[5] | 0.95 | the tagger's words |
| content_tags | ultrawide-bandgap semiconductor = one whose bandgap is significantly wider than GaN's 3.4 eV Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: UWBG semiconductor | content_tags.definitions[0] | 0.95 | the tagger's words |
| content_tags | Baliga figure of merit = breakdown voltage squared over specific on-resistance, for a low-frequency unipolar vertical power switch Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: Baliga figure of merit | content_tags.definitions[1] | 0.95 | the tagger's words |
| content_tags | and the Johnson figure of merit is the appropriate one instead for high-frequency high-power applications Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: Johnson figure of merit | content_tags.definitions[2] | 0.95 | the tagger's words |
| content_tags | maturity assessment = an informal verdict of Mature or Immature over three named criteria: doping, volume/cost, and substrate size and availability Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. also in: maturity assessment | content_tags.definitions[3] | 0.95 | the tagger's words |
| content_tags | moving from GaN to AlN raises the bandgap by 1.8x and the Baliga figure of merit by about 34x - the sixth power of that ratio Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | content_tags.statistics[0] | 0.95 | the tagger's words |
| content_tags | breakdown voltage scales as the 4th power of bandgap, since the critical field goes as its square Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | content_tags.statistics[1] | 0.95 | the tagger's words |
| content_tags | the choice between two mobility values matters little because the critical field varies only as the CUBE ROOT of mobility - a sensitivity stated rather than assumed Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | content_tags.statistics[2] | 0.95 | the tagger's words |
| content_tags | Fermi-Dirac statistics give these materials an intrinsic carrier concentration around 10^-10 per cubic centimetre, which the authors say has no direct physical meaning Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | content_tags.statistics[3] | 0.95 | the tagger's words |
| content_tags | replacing a 96%-efficient silicon power converter with a 98%-efficient wide-bandgap one halves the waste heat Quotation withheld — this record is not cleared for redistribution. The sentence is in the paper at the link above. | content_tags.statistics[4] | 0.95 | the tagger's words |
Tags that could not be placed in the text:
What was deliberately not tagged, and why, is recorded per paper by the tagger. Where a paper has no such record, this page says so rather than implying that nothing was declined.